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TAEC debuts 200W GaN HEMT

Posted: 07 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Toshiba? TAEC? GaN? HEMT?

Toshiba America Electronic Components (TAEC) has recently added a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.

"Our GaN HEMTs have been one of the technological foundations helping to accelerate the modernisation of RADAR technology from a tube-based to a solid-state-based design. In fact, solid-state weather RADAR systems using Toshiba devices are currently in operation at several sites in Japan," said Homayoun Ghani , business development manager, microwave devices, for TAEC's Discrete Business Unit.

The 200W TGI5254-200P is touted as the company's first commercial C-Band GaN HEMT that is optimised for pulse operation to support C-Band RADAR applications. The new device operates in the 5.2GHz to 5.4GHz range. RF performance specifications include output power of 53.0dBm with 43dBm input power, power gain of 10.0dB and drain current of 2.4Amps with pulse width of 200?s and duty ratio of 10 per cent. This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.

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