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High power RF drivers for ultrafast rise and fall times

Posted: 10 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:IXYS? Power RF Drivers? CMOS? TTL?

Ixys Corporation recently debut the IXRFD630 and IXRFD631 High Power RF Drivers. The drivers succeed DEIC420 and DEIC421 and represent the next generation of RF driver for 13.56 and 27.12MHz RF power.

The IXRFD630 and IXRFD631 are CMOS high-speed, high-current gate drivers specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD630 can source and sink 30A of peak current while producing voltage rise and fall times of less than 4ns and minimum pulse widths of 8ns.

The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD630 unmatched in performance and value.

While the IXRFD631 replicates the performance of the IXRFD630, the improvement stems from a Kelvin ground connection on the input side that allows use of a common mode choke substantially reducing ground bounce and false triggering. Along with the Kelvin ground pin, additional bypass capacitance has been added on the substrate to further stabilise the supply rails while providing better decoupling at the die. The IXRFD631 can source and sink 30A of peak current while producing voltage rise and fall times of less than 4ns and minimum pulse widths of 8ns. The input of the driver is compatible with +5V or CMOS with a fixed threshold level.





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