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RF/Microwave??

RF power transistors aimed at 2.45GHz ISM band

Posted: 10 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:ISM band? RF power transistor? LDMOS?

NXP Semiconductors N.V. has rolled out what it boasts as the industry's first complete RF power transistor line geared for the 2.45GHz ISM frequency band, enabling RF energy to be used as a clean, highly efficient and controllable heat source.

Optimally matched to the 2.45GHz ISM band, the NXP BLF2425M and BLF25M series of RF power transistors claim to achieve best-in-class efficiencies in excess of 52 per cent and offer a full range of power levels between 12-350W. NXP developed this dedicated ISM portfolio while working with lead customers on RF-powered solutions for home appliances for cooking, heating and drying; medical devices for precision medical procedures; and automotive engines, the company indicated.

The devices are based on NXP's latest 28V LDMOS processes and all feature NXP's field-proven ruggedness, manufacturing consistency and long-term reliability, which enable these transistors to drive the typically mismatched loads of ISM applications.

The BLF2425M6L(S)180P, BLF2425M7L(S)140 and BLF2425M7L(S)250P are now in volume production. Engineering samples of the BLF25M612(G) are available to qualified customers.





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