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Freescale outs power solutions for RF land mobile market

Posted: 11 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:LDMOS? power transistor? VHF? UHF? transceivers?

Freescale Semiconductor has expanded its flagship family of Airfast RF power solutions with the introduction of three LDMOS power transistors and one gallium nitride (GaN) transistor. According to the company, the Airfast LDMOS power transistors target multi-band applications.

The AFT09MS007N, AFT09MP055N and AFT09MS015N LDMOS power amplifiers are engineered to perform flawlessly in extreme operating conditions, delivering exceptional performance, stability and gain for land mobile radio applications, said the company. These devices are intended for mobile VHF, UHF and 700-900MHz transceivers used in public safety, professional mobile radio and other harsh machine-to-machine communications environments.

The three Airfast RF LDMOS power products are designed to survive >65:1 VSWR, even with simultaneous over voltage and overdrive stressing the amplifier and its RF power transistors. They integrate much of the circuitry required to maintain stability, thereby simplifying design and supporting stability under a wide range of operation conditions. Accompanied by a comprehensive range of reference designs and requiring only a few inductors and capacitors to complete the design, Freescale's LDMOS Airfast RF power products for the land mobile market promise better efficiency and linearity, in a similar footprint, than module-based solutions. Additionally, Airfast RF power devices typically have 65 per cent or more efficiency, significantly more than modules and competitive discrete devices.

For radio operators and public safety personnel, the ability to communicate with multiple agencies is critical to taking rapid, organised and efficient action during emergency situations. The broadband performance of Freescale's Airfast AFG30S010 GaN device allows a single power amplifier to support many land mobile bands, eliminating the need to design large, expensive and complex multi-band systems for multi-agency communication. Offering high efficiency and advanced thermal performance, the AFG30S010 GaN device provides the functionality to deliver a reduced amplifier footprint, critical to meeting customer demands for smaller product form factors.

The Airfast LDMOS devices operate from a nominal 7.5VDC supply for handheld radio applications and a 12.5VDC supply for mobile radio applications, while integrating ESD protection. The Airfast GaN device operates from a 28VDC supply.

The AFT09MS007N 7 W and AFT09MP055N 55 W devices are planned for production in 2Q13. Sample quantities of the AFT09MS015N 15 W and AFG30S010 devices are planned for 4Q13. Reference designs and other support tools are available to design engineers.





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