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500W GaN L-band amplifier ready for rugged radar designs

Posted: 13 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:RF Micro Devices? gallium nitride? power transistor?

RF Micro Devices recently debut the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

RFMD's new amplifier is optimised for pulsed power applications requiring efficiency and compact size. It operates from 1.2GHz to 1.4GHz and provides 500W of pulsed RF power from a 50V supply. It also offers high gain of 16.5dB and high efficiency of 55 per cent. The MPT is housed in a small form factor package of 24x17.4mm, and is input and output matched to 50ohms, efficiently minimising external components. In addition, the package leverages the company's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.

The RFHA1027 targets new and existing radar architectures requiring ruggedness and reliability. The introduction of RFHA1027 follows the previous release of RFHA1020 (280W L-Band) and RF3928 (280W S-Band).

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