Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

CMOSF8H 0.15?m process applied to ST's latest EEPROMs

Posted: 17 Jun 2013 ?? ?Print Version ?Bookmark and Share

Keywords:STMicroelectronics? EEPROM? CMOSF8H? stored data?

STMicroelectronics (ST) has recently rolled out its latest EEPROM family. ST's latest EEPROM line-up boasts endurance of up to 4 million erase/write cycles, providing designers extra freedom to update stored data more frequently and extend system lifetime, even at high temperatures.

The company's advanced CMOSF8H 0.15?m process is key to the EEPROM's enhanced endurance. Devices are available in industrial or automotive-qualified variants with specified endurance of 4 million cycles per byte at 25C, and 400,000 cycles per byte at 150C. Total device endurance is characterized at 1,000 million cycles, and specified data retention is 200 years at 55C.

The extended cycling performance and longer data retention simplify design by allowing storage of frequently updated data as well as slow-changing parameters, avoiding memory-hungry strategies for extending the lifetime of standard EEPROMs. In addition, the total endurance allows use in applications such as automotive or medical systems that must update key parameters frequently as environmental conditions change (data-logging).

Further information regarding ST's EEPROM line up can be found here.

Article Comments - CMOSF8H 0.15?m process applied...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top