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4500V power MOSFETs prepped for high voltage apps

Posted: 05 Jul 2013 ?? ?Print Version ?Bookmark and Share

Keywords:IXYS? MOSFET? power conversion? Direct Copper Bond?

IXYS Corporation has released its 4500V N-Channel Power MOSFETs in an international standard size package. The current ratings range from 200mA to 2A. The devices are designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV.

"We all know from Physics 101, that it is more efficient to provide electrical energy efficiently with higher voltage than with higher current. Thus, we developed this technology, to enable power conversion or energy tapping from the electrical grid closer to the grid voltage," commented Dr. Nathan Zommer, Founder and CEO of IXYS Corporation. "Numerous other industrial, transportation and medical applications require also high voltage control capabilities that these MOSFETs enable."

The high voltage MOSFETs are suited for parallel device operation reducing the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system.

Moreover, a ceramic isolation of up to 4.5kV is achieved with the Direct Copper Bond (DCB) substrate technology, an electrically isolated tab is provided for heat sinking. The DCB provides low thermal impedance and best-in-class power and temperature cycling capabilities. And the moulding epoxies meet the UL 94 V-0 flammability classification.

These new Power MOSFETs can provide an optimal solution for applications such as tapping power from the high voltage grid, capacitor discharge circuits, high-voltage automated test equipment, laser and x-ray generation systems, high-voltage power supplies, and pulse circuits.





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