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Failure signature of electrical overstress

Posted: 18 Jul 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Power MOSFETs? fault conditions? Electrical Overstress? plastic encapsulation damage?

Power MOSFETs are employed to switch high voltages and currents, while minimising their own internal power dissipation. Under fault conditions however, it is possible to apply voltage, current and power exceeding the MOSFET capability. Fault conditions can be either due to an electrical circuit failure or a mechanical fault with a load such as a seized motor. This leads to Electrical Overstress (EOS). Typically the consequence of EOS is the short circuiting of at least 2 of the 3 MOSFET terminals (gate, drain, source). In addition, high local power dissipation in the MOSFET leads to MOSFET damage which manifests as burn marks, die crack and in extreme cases as plastic encapsulation damage.

Examination of the size and location of the burn mark, the failure signature, provides information about the type of fault condition which caused the failure.

View the PDF document for more information.

Originally published by NXP Semiconductors at as "Failure signature of electrical overstress on power MOSFETs".

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