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Fast turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX

Posted: 30 Jul 2013 ?? ?Print Version ?Bookmark and Share

Keywords:BFU730LX? HBT? SiGe:C? BiCmos? silicon germanium?

The production of BFU730LX discrete HBT utilises NXP Semiconductors' 110GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows a steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.

The BFU730LX is one of a series of transistors made in SiGe:C.

BFU710F, BFU730F, BFU760F, BFU768F and BFU790F are the other types. BFU710F is intended for ultra low current applications. The BFU760F, BFU768F and BFU790F are high current types and are intended for application where linearity is key.

View the PDF document for more information.

Originally published by NXP Semiconductors at www.nxp.com as "Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX".





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