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Fast turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730F

Posted: 31 Jul 2013 ?? ?Print Version ?Bookmark and Share

Keywords:BFU730F? HBT? SiGe:C? BiCmos? silicon germanium?

NXP Semiconductors' 110GHz fT SiGe:C BiCmos process is used in the production of BFU730F discrete HBT. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows a steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.

The BFU730F is one of a series of transistors made in SiGe:C.

BFU710F, BFU760F and BFU790F are the other types. BFU710F is intended for ultra low current applications. The BFU760F and BFU790F are high current types and are intended for application where linearity is key.

View the PDF document for more information.

Originally published by NXP Semiconductors at www.nxp.com as "Low Noise Fast Turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730F".





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