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Metrology system configured for advanced packaging

Posted: 26 Jul 2013 ?? ?Print Version ?Bookmark and Share

Keywords:TSV? wafer level packaging? 3D ICs?

Rudolph Technologies Inc. has uncloaked three application-specific configurations of its NSX 320 automated macro defect inspection system. According to the company, the suite includes specially-designed configurations for wafer level packaging, 2.5D (interposer) and 3D ICs using through-silicon via (TSV) as interconnects.

"These new application-specific configurations of our established NSX 320 system are designed to address the emerging need for fast, precise 3D measurements in the rapidly growing advanced packaging market sector," said Rajiv Roy, VP of business development and director of back-end marketing at Rudolph Technologies. "We have completed the integration of 3D measurement sensors, recently acquired from Tamar Technology, into the NSX System. Tamar's sensor technology is well recognised and widely used, and integrating it into the NSX 320 system adds critical capability required for enabling advanced packaging applications such as copper pillar bumping and TSV."

The NSX 320 wafer level packaging configuration is designed to measure film thickness (polymers, photoresist, glass), thin remaining silicon thickness (RST), surface topography, copper pillar height and solder bump height. The advanced wafer level packaging configuration adds measurements of the wafer profile (warp and bow), total stack thickness and thick/thin RST (bonded wafer before and after grind). The 3D IC configuration is capable of all the above measurements plus via depth, trench depth, bonded wafer TTV and adhesive layers.

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