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High power SiC diodes enable flexible layout options

Posted: 29 Aug 2013 ?? ?Print Version ?Bookmark and Share

Keywords:IXYS Corporation? Silicon Carbide? diodes?

IXYS Corporation recently introduced its SS150 and SS275 series high Power Silicon Carbide (SiC) Diodes by its IXYS Colorado division. Three diode configurations provide designers with flexible connection and layout options.

Packaged in a low inductance, surface mount DE Series package, these products provide excellent switching performance. The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings. Standard internal configurations include TI (Triple Independent, with no common connections), TA (Triple Anode, with anodes tied together) and TC (Triple Cathode, with cathodes tied together)

The SS150 and SS275 High Power SiC Diode Modules are ideal for applications such as MHz Switch, Mode Power Supplies, High Frequency Converters, Resonant Converters and Rectifier Circuits.

Both the SS150 & SS275 come in a surface mount package. The devices are available in 600V, 10A and 1200V, 5A configurations featuring Zero Reverse Recovery and Zero Forward Recovery. "The SS150 and SS275 High Power SiC Diode Modules allow designers more flexible design options with high frequency applications," commented Stephen Krausse, IXYS Colorado's general manager.

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