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Dual EPAD MOSFET arrays expand operating range

Posted: 17 Sep 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Mouser Electronics? EPAD? MOSFET? power mobile devices?

Mouser Electronics recently announced its Advanced Linear Devices (ALD) precision N-Channel EPAD MOSFET arrays, extending the operating range for sensor arrays, energy harvesting and low power mobile devices.

ALD precision N-Channel EPAD MOSFET arrays are precision matched at the factory using ALD's proven EPAD CMOS technology. These dual monolithic devices are enhanced additions to the ALD110900A/ALD110900 EPAD MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD212900A/ALD212900 features Zero-Threshold voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges.

With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. These precision devices are versatile as design components for a broad range of analogue small signal applications such as basic building blocks for current mirrors, matching circuits, current sources, differential amplifier input stages, transmission gates, and multiplexers. They also excel in limited operating voltage applications, such as very low level voltage-clamps and nano-power normally-on circuits.

Further information regarding the ALD Precision N-Channel EPAD MOSFET Arrays can be found here.

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