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Toshiba adds to SiC schottky barrier diodes family

Posted: 23 Sep 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Toshiba? schottky barrier diode? silicon carbide? photovoltaic power?

Toshiba Corp. has revealed that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the introduction of a 10A product to the existing line-up of 6A, 8A and 12A products.

Toshiba adds to SiC schottky barrier diodes family

SBDs are intended for diverse applications, including power conditioners for photovoltaic power generation systems. They can also replace silicon diodes in switching power supplies, where they are 50 per cent more efficient, stated the company.

SiC power devices offer more stable operation than current silicon devices, even at high voltages and currents, as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.

Mass production began September 19.





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