Richardson reveals 1.7kV SiC MOSFET from Cree

Richardson RFPD Inc. has introduced what it boasts as the industry's first 1Ω, 1.7kV Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. According to the company, the C2M1000170D Z-FET offers high speed switching with low capacitances and high blocking voltage with low RDS(on).

The device is easy to parallel, simple to drive and resistant to latch-up, stated the firm. The C2M1000170D is intended for power supplies to 200W operating from DC inputs from 200V to 1kV, and it replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high voltage buses is required to operate system logic, displays and cooling fans.

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The SiC MOSFET beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability, while lowering system implementation costs, boasted the company.

The C2M1000170D features continuous drain current of 4.9A (IDS (DC) @ 25锟紺) and 3A (IDS (DC) @ 100锟紺). It also flaunts 1Ω drain-source on-state resistance (RDS(ON) @ 25锟紺) and is available in a TO-247-3 package.

The device is in stock and available for immediate delivery.