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Transphorm, Fujitsu to merge GaN power device biz

Posted: 02 Dec 2013 ?? ?Print Version ?Bookmark and Share

Keywords:Transphorm? Fujitsu? GaN power device? gallium-nitride?

Fujitsu Ltd, Fujitsu Semiconductor Ltd and Transphorm Inc. have reached a deal where Fujitsu Semiconductor and Transphorm will integrate their gallium-nitride (GaN) power devices for power supplies businesses. According to them, the integration will improve the market competitiveness of Transphorm's GaN power device business. The companies have also agreed that both Fujitsu and Fujitsu Semiconductor will take a minority equity position in Transphorm.

Fujitsu and Fujitsu Semiconductor will establish a new company in Japan for the GaN power device business, and will transfer to the new company their combined design and development assets as well as IP rights in GaN power devices. The two companies will make an in-kind investment in Transphorm in the form of the new company's shares, and will receive an equivalent value of shares in Transphorm in return. As a result of this transaction, the new company will become a wholly owned subsidiary of Transphorm. In addition, Fujitsu and Fujitsu Semiconductor will make a cash investment in Transphorm and will contribute to Transphorm's management in their roles as minority shareholders. The employees at Fujitsu and Fujitsu Semiconductor who are directly involved in the GaN power device business will be reassigned to the new company, where they will continue development and production work with Transphorm's employees. After the integration, Transphorm will continue R&D work at both its prototyping line in the US as well as Fujitsu Semiconductor's Aizu-Wakamatsu plant, which will be under exclusive contract with Transphorm to handle wafer processing. Transphorm and Fujitsu Semiconductor intend to build a global market by generating synergies from bringing together their marketing, customer support, and applications development capabilities.

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