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Power semiconductor segment boosts GaN market

Posted: 24 Feb 2014 ?? ?Print Version ?Bookmark and Share

Keywords:GaN? semiconductor? power?

The global market growth of GaN semiconductor devices continues on an upward spiral, expecting to record a $2,203.73 million revenue at a CAGR of 24.6 per cent through 2019, according to a Transparency Market Research (TMR) report. This ascend is attributed to the aggressive Asia Pacific market, increasing by 27.7 per cent CAGR during the forecast period.

The semiconductor industry is witnessing a shift in design, moving from silicon towards the use of GaN, as demand for high speed, high temperature and power handling capabilities heighten. GaN features high maximum current, breakdown voltage, and oscillation frequency characteristics. Against silicon, GaN-based devices are smaller, lighter, and more power efficient. The material has thus become the preference in applications including military, aerospace and defence sector, automotive sector and high power applications such as industrial, solar, power and wind.

TMR found that opto semiconductor comprised the major product segment in the GaN market in 2012. It accounted for a hefty $81.68 million at 96.6 per cent global share, due mainly to its applications in military, aerospace and defence. The growing popularity of GaN in high power industrial applications though is predicted to create an upturn in the power semiconductor segment.

Next to the opto segment, consumer electronics also performed well in 2012, followed by the ICT and automotive sector. Meanwhile, the introduction of 4G network has generated a rising demand for high power transistors and base stations, doubling the growth pace of the power semiconductor segment.

Key performers in 2012 are Europe, Asia Pacific and RoW, with North America as the market leader. Industry participants that scored well include Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), Cree Inc (U.S.), Nichia Corporation (Japan) and RF Micro Devices Inc. (U.S.).

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