Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Memory/Storage

NV memory: Significance of filament size and shape

Posted: 30 Jun 2014 ?? ?Print Version ?Bookmark and Share

Keywords:ReRAMs? RRAMs? memory array? high-resistance state? IMEC?

This means that it should be possible to find an upper electrode thickness that provides the optimal performance in both respects for data retention. The retention tests were carried out at temperatures of 250deg.C for 30 days. With 3nm Ta2O5, it was claimed that forming voltages and operating voltages of The formation of the RRAM scavenging electrode was again the focus of the work of another team from IMEC, Belgium, [3], this time using a TiN/HfO/Hf/TiN structure where the Hf served as an oxygen scavenging layer by taking oxygen from the HfO film. Specifically, the effects investigated were on the thickness of the oxygen exchange layer (OEL) of doping the HfO film with 18% of Ti,Si and Al. The OEL is the key to the operation of the device, and it is formed during processing. It has never been clear as to the variables that influence the thickness of the OEL as it carries out its initial oxygen scavenging role. This paper provided at least one of the important variables, i.e. doping. The HfO2/Hf RRAM cell structure (figure 3; not to scale) consists of a 5nm oxide layer and a 10nm hafnium cap.

Figure 3: The HfO2/Hf RRAM cell structure consists of a 5nm oxide layer and a 10nm hafnium cap.

It was found that changes in SET/RESET voltages, endurance, data retention, and the optimal programming window result mainly from the oxygen scavenging efficiency of Hf cap in the presence of the different dopants. Doping offers a means of controlling the formation and thickness of the OEL, which controls the RRAM switching characteristics and retention. Ti doping resulted in the widest OEL, followed by the more normal undoped HfO. Aluminium and silicon provided the thinnest OEL. The authors of the paper suggest that doping of the oxide layer may offer a route to designing RRAM for different applications.

Figure 4: What is described as a complementary atom switch is based on two copper filament memory devices in series with a control electrode at the mid-point.

Logic with memory
A group from the Low-power Electronics Association & Project (LEAP), Japan, [4], explored the possibility of combining memory with logic for what they described as non-volatile programmable logic (NPL) functions.

What is described as a complementary atom switch (CAS) is based on two copper filament memory devices in series with a control electrode at the mid-point (figure 4). The individual memory elements from the bottom electrode up have a copper electrode, AlTiO buffer layer, a polymer solid electrolyte (PSE), and a Ru alloy upper electrode.

The optimal composition of the buffer layer with 50% Ti prevents the formation of a passivation layer of aluminium or titanium oxide forming on the surface of the buffer. This prevents the oxygen for the redox process from reaching the surface of the copper electrode, leaving metal particles at that surface which in turn act to limit set time. Minimising the write time is essential if this device has to have any claims as a memory or logic device. By optimising the buffer composition, write times of 10ns are claimed with the switching speed, starting at about 1 sec for 1.5volts and falling to 10ns at 2Volts for a value of 56mV/decade, with a write currents in the range 300 to 500 micro-Amps. The write/erase cycle endurance was reported as just over 1000 cycles, so clearly more work to be done in that respect. For evaluation, a 1Mb memory array was fabricated. Stress testing indicates a projected data retention of 10 years at 125 deg.C. One of the extremely important results from this work is a claim that the memory devices do not require forming, and the first switching event is the same as all subsequent switching events.

Slowly, a more complete understanding of the variables and details of the operation of RRAMs and filament formation in many different types of memory device and materials is becoming clearer. The fact that there appear to be so many promising RRAM and ReRAM technologies may be a problem as well as an opportunity.

My view is rather than promise what is needed, all of those throwing their proverbial hats into the ring should use the information they have to provide a memory cell design that could be monolithically integrated into a 8Gb memory array, for example, and define the performance. At the moment, it is this writer's view that it might be better if emerging NV memory focused not on mass memory and bit density but on providing memory designs and solutions for the single-chip embedded memory business. That is where it now appears there is an opportunity for game-changing memory success.

1. Fast Step-Down Set Algorithm of Resistive Switching Memory with Low Programming Energy and Significant Reliability Improvement, Y. Meng, X. Y. Xue, Y. L. Song, J. G. Yang, B. A. Chen, Y. Y. Lin*, ASIC and System State Key Laboratory, Fudan University, Shanghai, 201203, China; Q. T. Zou, R. Huang, J. G. Wu Technology Development Center, Semiconductor Manufacturing International Corp., Shanghai, 201203, China.
2. Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device, L. Goux1*, A. Fantini1, A. Redolfi1, C.Y. Chen, F.F. Shi, R. Degraeve1, Y.Y. Chen1, T. Witters1, G. Groeseneken, M. Jurczak1 imec, Kapeldreef 75, B-3001 Leuven, Belgium; 2 KU Leuven, Belgium.
3. Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants, Y. Y. Chen, R. Roelofs*, A. Redolfi, R. Degraeve, D. Crotti, A. Fantini, S. Clima, B. Govoreanu, M. Komura**, L. Goux, L. Zhang***, A. Belmonte****, Q. Xie*, J. Maes*, G. Pourtois and M. Jurczak imec, Kapeldreef 75, B3001, Leuven, Belgium; *ASM international, Belgium; **Toshiba assignee in imec,***also with Dept. of Electrical Engineering (ESAT), KU Leuven, Belgium; ****also with Dept. of Physics & Astronomy, KU Leuven, Belgium.
4. A Fast and Low-Voltage Cu Complementary-Atom-Switch 1Mb Array with High-Temperature Retention, N. Banno, M.Tada, T. Sakamoto, M. Miyamura, K. Okamoto, N. Iguchi, T. Nohisa, and H. Hada Low-power Electronics Association & Project (LEAP), West 7A, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan.

About the author
Ron Neale is an independent electrical/electronic manufacturing professional.

To download the PDF version of this article, click here.

?First Page?Previous Page 1???2

Article Comments - NV memory: Significance of filament ...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top