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Alliance Memory debuts high-speed CMOS DDR3 SDRAMs

Posted: 30 Jun 2014 ?? ?Print Version ?Bookmark and Share

Keywords:Alliance Memory? CMOS? SDRAM? FBGA?

Alliance Memory has unveiled a lineup of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1Gb, 2Gb and 4Gb in 78-ball 9 x 10.5 x 1.2mm and 96-ball 9 x 13 x 1.2mm FBGA packages. According to the company, the devices offer extremely fast transfer rates of up to 1600Mb/s/pin and clock rates of 800MHz.

With minimal die shrinks, the company's DDR3 (1.5V) and DDR3L (1.35V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer and telecom applications, eliminating the need for costly redesigns and part requalification.

The AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3 and AS4C512M8D3 DDR3 SDRAMs operate from a single 1.5V (±0.075V) power supply, while the AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L and AS4C512M8D3L DDR3L SDRAMs operate from a single 1.35V power supply. The devices are offered with a commercial temperature range of 0°C to 95°C and an industrial temperature range of -40°C to 95°C.


The DDR3 and DDR3L SDRAMs are internally configured as eight banks of 64M, 128M, 256M and 512M x 8bits and/or 16bits. The devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance. RoHS-compliant, the devices are lead (Pb)- and halogen-free.

Samples of the DDR3 and DDR3L SDRAMs are available with lead times of six to eight weeks for production quantities.

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