Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Amplifiers/Converters

X-REL augments high-temperature MOSFET transistors line

Posted: 02 Jul 2014 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET? transistors? drain currents?

X-REL Semiconductor has broadened its XTR2N family of high-temperature MOSFET transistors by introducing two new mid-power P-channel and two small-signal P- and N-channel transistors intended for high-reliability, extreme temperature and extended lifetime applications.

The mid-power P-channel transistors introduced are divided into two families depending upon the maximum operating voltage. Devices XTR2N0325 and XTR2N0350 are intended for a maximum operation drain-source voltage of -30V, whereas XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50V. In each sub-family, two different transistor sizes, "25" and "50", are available providing two possible maximum drain currents.

X-REL augments high-temperature MOSFET transistors line

The small signal transistors released are the XTR2N0307 30V P-channel MOSFET, and the XTR2N0807 80V N-channel MOSFET. The XTR2N0307 small signal 30V P-channel has an on-state resistance at 230 of 7?, whereas that of the XTR2N0807 small signal 80V N-channel is 9.1?, with respective continuous drain currents of 350mA (900mA peak) and 200mA (450mA peak).

The devices are able to reliably operate well below and above the -60 to 230 (5 years at 230) temperature range. The expected lifetime of X-REL Semiconductor parts in a driver application operating at Tj=150 is over 35 years.

- Julien Happich
??EE Times Europe

Article Comments - X-REL augments high-temperature MOSF...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top