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Mobile DDR SDRAMs prolong battery lifetime in portables

Posted: 18 Sep 2014 ?? ?Print Version ?Bookmark and Share

Keywords:Alliance Memory? CMOS? DDR SDRAM? consumer electronics?

Alliance Memory has rolled out a portfolio of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) that the company said is geared to increase efficiency and extend battery life in compact portable devices. Boasting low power consumption from 1.7-1.95V and a number of power-saving features, the 256Mb, 512Mb, 1Gb and 2Gb devices are offered in 8 x 9mm 60-ball and 8 x 13mm 90-ball FPBGA packages.

With each new product generation, designers of today's portable devices are tasked with providing more functionality in less space while using less power. To meet this demand, the devices from Alliance Memory feature auto temperature compensated self-refresh (ATCSR) to cut power consumption at lower ambient temperatures. In addition, their partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn't required.


The company stated that the AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1 and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment and networking devices.

With their double data rate architecture, the mobile DDR SDRAMs offer high-speed operation with clock rates of 166MHz and 200MHz. For optimal functionality in extreme environments, all devices are available in both extended (-30°C to 85°C) and industrial (-40°C to 85°C) temperature ranges. The mobile DDR SDRAMs offer fully synchronous operation and provide programmable read or write burst lengths of 2, 4, 8 or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb) and halogen-free.

Samples of the mobile DDR SDRAMs are available with lead times of six to eight weeks for production quantities.

Links to product datasheets: (AS4C16M16MD1-6BCN, AS4C16M16MD1-6BIN) (AS4C32M16MD1-5BCN, AS4C32M16MD1-5BIN)

(AS4C16M32MD1-5BCN, AS4C16M32MD1-5BIN)

(AS4C64M16MD1-6BCN, AS4C64M16MD1-6BIN)

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