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800V DTMOS IV super junction MOSFET cuts switching loss

Posted: 06 Nov 2014 ?? ?Print Version ?Bookmark and Share

Keywords:Toshiba Electronics Europe? MOSFET? super junction? LED lighting? power supply?

Toshiba Electronics Europe (TEE) announced what it touts as the first 800V power MOSFET based on its high voltage DTMOS IV super junction technology. According to the company, the TK17A80W uses its modern single epitaxial process and is aimed at equipment that requires high reliability, power efficiency and a compact design.

Compared to multi epitaxial processes, Toshiba's Deep Trench technology promises to deliver lower ON-resistance (RDS(ON)) at higher temperatures. It also offers reduced turn-off switching losses (EOSS) than previous technology generations, added the company. The combination of reduced increase in RDS(ON) at high temperatures and reduced EOSS provides higher efficiency for power supplies and assists designers in minimising system size, added Toshiba. (SEE ALSO: Toshiba MOSFET supports fast current switching)


DTMOS IV enables faster switching performance by reducing parasitic capacitance between gate and drain. Typical CISS for TK17A80W is only 1450pF (VDS=300V, f=100kHz). Maximum ratings are 800VDSS, ±30VGSS and 17A drain current. Maximum RDS(ON) is 0.3?.

Targeted at power supplies and adapters, fly back converters and LED lighting equipment, the TK17A80W starts mass production in 4Q14 in a fully isolated TO-220SIS package. Samples are available. Further performance options and TO-220, DPAK and IPAK packages will follow.

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