800V DTMOS IV super junction MOSFET cuts switching loss

Toshiba Electronics Europe (TEE) announced what it touts as the first 800V power MOSFET based on its high voltage DTMOS IV super junction technology. According to the company, the TK17A80W uses its modern single epitaxial process and is aimed at equipment that requires high reliability, power efficiency and a compact design.

Compared to multi epitaxial processes, Toshiba's Deep Trench technology promises to deliver lower ON-resistance (R_DS(ON)) at higher temperatures. It also offers reduced turn-off switching losses (E_OSS) than previous technology generations, added the company. The combination of reduced increase in R_DS(ON) at high temperatures and reduced E_OSS provides higher efficiency for power supplies and assists designers in minimising system size, added Toshiba. (SEE ALSO: Toshiba MOSFET supports fast current switching)

DTMOS IV enables faster switching performance by reducing parasitic capacitance between gate and drain. Typical C_ISS for TK17A80W is only 1450pF (V_DS=300V, f=100kHz). Maximum ratings are 800V_DSS, 卤30V_GSS and 17A drain current. Maximum R_DS(ON) is 0.3鈩?.

Targeted at power supplies and adapters, fly back converters and LED lighting equipment, the TK17A80W starts mass production in 4Q14 in a fully isolated TO-220SIS package. Samples are available. Further performance options and TO-220, DPAK and IPAK packages will follow.