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Half-bridge transistor touts 87 per cent system efficiency

Posted: 11 Dec 2014 ?? ?Print Version ?Bookmark and Share

Keywords:transistors? GaN? FETs? buck converters?

Efficient Power Conversion Corp. (EPC) has unveiled a 60V enhancement-mode monolithic half-bridge GaN transistor. The EPC2101 is suitable for high-frequency DC/DC conversion. Used in a complete buck converter, the EPC2101 yields system efficiency that approaches 87 per cent at 14A, and over 82 per cent at 30A when switching at 500kHz and converting from 28V to 1V.

By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50 per cent reduction in board area occupied by the transistors.

The upper FET has a typical RDS(on) of 8.4m?, and the lower FET has a typical RDS(on) of 2m?. The high-side FET is approximately one-fourth the size of the low-side device to optimise DC/DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2101 comes in a chip-scale package, and is 6.05mm x 2.3mm. The EPC9037 Development Board is 2in by 1.5in and contains one EPC2101 integrated half-bridge component using Texas Instruments' LM5113 gate driver, supply and bypass capacitors.

The EPC2101 monolithic half-bridge price for 1,000 units is $6.92 each, while the EPC9037 development boards are priced at $137.75 each. Both are available for delivery from Digi-Key.

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