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Manufacturing tech aimed at non-volatile memory devices

Posted: 22 Dec 2014 ?? ?Print Version ?Bookmark and Share

Keywords:Globalfoundries? NaMLab? Fraunhofer Institute for Photonic Micro Systems? non-volatile memory?

The results from a collaborative research among NaMLab (TU Dresden), the Fraunhofer Institute for Photonic Micro Systems (IPMS) and Globalfoundries are being included in the present version of 'The International Technology Roadmap for Semiconductors,' the technical guide for the semiconductor branch. The development project was accomplished at 'Cool Memory,' a sub-project of Cool Silicon, which focuses on energy efficient micro-and-nanoelectronics funded by the Federal Ministry for Education and Research.

Based on doped hafniumoxide, the team has developed a cost-effective, energy-efficient ferroelectric non-volatile memory chip that requires low write voltage, can be produced at small structural width and whose production can easily be integrated in common semiconductor manufacturing processes.

Thomas Mikolajiick, professor for Nanoelectronic Materials and Director of the NaMLab at TU Dresden, as well as the coordinator for Cool Silicon said the project's inclusion in the International Technology Roadmap is a confirmation of the success of the team's innovative work.

"For an innovation made in Dresden to become part of the International Technology Roadmap guidelines, is certainly not commonplace," said Mikolajiick. "We are very proud of this accomplishment because the roadmap is followed closely by members of the international semiconductor industry."

Cool Silicon project for non-volatile memory

The novel technology is a result of the Cool Silicon sub-project called 'Cool Memory', developed by participating partners searching for innovative ways to manufacture non-volatile memory.

"Typical technologies currently used for non-volatile memory are based on the principle of charge-storage," Mikolajick noted. "This has several disadvantages. Writing, for instance, requires high voltage and is very energy intensive. Due to the high voltage, certain circuit parts for controlling memory cannot be reduced to desired sizes, which renders such memory inefficient for small and medium storage densities."

Therefore, the Dresden scientists rely on a different technology. They store data in ferroelectrics, a material that can be brought into two different polarisation states by means of electric charge and switching requires very little energy.

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