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Flash memory devices complete full chip erase in 35ms

Posted: 22 Jan 2015 ?? ?Print Version ?Bookmark and Share

Keywords:flash memory devices? SuperFlash? SQI? Serial Flash? SFDP?

Microchip Technology Inc. has added the SST26WF080B and SST26WF040B devices to its line of 1.8V Serial Quad I/O (SQI) SuperFlash Memory. Equipped with SuperFlash technology, these devices tout fastest erase times as well as offer 4Mbit and 8Mbit of memory.

With the SST26WF080B and SST26WF040B, sector and block erase commands are completed in just 18ms and a full chip erase operation is completed in 35ms. Competing devices require in the range of 5s to 15s to complete a full chip erase operation, making SST26WF080B and SST26WF040B approximately 300 times faster. The fast erase times can provide a significant cost savings to customers by minimising the time required for testing and firmware updates, therefore increasing their manufacturing throughput.

The SQI interface is a high-speed 104MHz quad I/O serial interface that allows high-data throughput in a low pin-count package. This interface enables low latency execute-in-place (XIP) capability, allowing programs to be stored and executed directly from the flash memory and eliminating the need for code shadowing on a RAM device. The latest devices provide faster data throughput than a comparable x16 parallel flash device without the associated high cost and high-pin count of parallel flash. The SQI interface also offers full command-set backwards compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Designed for low-power consumption, Microchip's flash devices help maximise battery life in portable powered applications. Standby current consumption is 10?A typical and a deep power-down mode further reduces current consumption to 1.8?A typical. Active read current at 104MHz is 15mA typical. The combination of 1.8V operation with low-power consumption and small form factor packaging makes the SST26WF080B/040B ideal for applications such as mobile handsets, Bluetooth headsets, GPS, camera modules, hearing aids and any battery-powered devices.

The SST26WF080B and SST26WF040B offer 100 years data retention and device endurance of over 100,000 erase/write cycles. Enhanced safety features include software write protection of individual blocks for flexible data/code protection and a One-Time Programmable (OTP) 2KB Secure ID area. These features protect against unauthorised access and malicious read, program and erase intentions. The device also includes a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table, which contains identifying information about the function and capability of the SST26WF080B/040B in order to simplify software design.

The flash devices are available for sampling and volume production in 8-contact WSON (6mm x 5mm), 8-lead SOIC (150mil), 8-contact USON (2mm x 3mm), 8-ball XFBGA (Z-Scale) packages, starting at $0.57 each for SST26WF040B and $0.65 each for SST26WF080B in 10,000-unit quantities.

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