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Silicon-carbide power MOSFETs minimise footprint, BOM

Posted: 06 Feb 2015 ?? ?Print Version ?Bookmark and Share

Keywords:STMicroelectronics? MOSFET? silicon-carbide? smart grid?

STMicroelectronics has introduced the 1.2kV SCT20N120 silicon-carbide power MOSFET that claims to offer improved efficiency and reliability. The devices are aimed at energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies and smart grid equipment.

According to the company, the SCT20N120 provides remarkable on-resistance (RDS(ON)) that is better than 290m all the way to the 200C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximise reliability, noted ST.


In addition to their lower energy losses, ST said its silicon-carbide MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight and BOM costs. The SCT20N120's high-temperature capability helps to ease cooling-system design in applications such as power modules for electric cars.

The SCT20N120 comes with the added advantage of ST's proprietary HiP247 package with enhanced thermal efficiency, which allows reliable operation up to 200C while maintaining compatibility with the industry-standard TO-247 power-package outline.

The SCT20N120 is in full production, priced from $8.50 for orders of 1,000 pieces.

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