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Infineon unveils MOSFETs with 'lowest' on-state resistance

Posted: 09 Feb 2015 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFETs? on-state resistance? synchronous rectification?

Germany-based Infineon Technologies AG has added 80V and 100V variants to its OptiMOS 5 line. The latest OptiMOS 5 MOSFETs tout their lowest on-state resistance (R DS(on))每up to 45 per cent reduction for 80V and up to 24 per cent reduction for 100V compared to the previous generation. They are geared for telecom and server power supplies as well as in industrial applications such as solar, low voltage drives and power adapter.

In comparison to the previous generation, the OptiMOS 5 80V variant offers 38 per cent reduction in output charge and the OptiMOS 5 100V variant a 25 per cent reduction. Less output charge means reduced switching losses and lower voltage overshoot in hard switching topologies and synchronous rectification. This results in faster design and lower development costs.

OptiMOS5 80V/100V

Moreover, the reduction in gate charge of 24 per cent for 80V and 29 per cent for 100V also reduces switching losses especially at light load operation and in applications requiring high efficiency throughout the whole load range, such as micro-inverters and power optimisers for solar applications.

OptiMOS5 80V and 100V come in seven different packages: SuperSO8, S308, TO-Leadless, TO-220, TO-220 FullPAK, D2PAK and D2PAK 7-pin with R DS(on) ranging from 1m次-4m次, 4m次-8m次 and 8m次-2m次 for 80V and 1m次-4 m次, 4m次-8m次 and 8m次-10m次 for 100V. Samples are available in both voltage classes and all packages. Products are in volume production.





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