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20V n-channel MOSFET brings power density to mobile devices

Posted: 23 Feb 2015 ?? ?Print Version ?Bookmark and Share

Keywords:MOSFET?

Vishay Intertechnology developed a 20V n-channel TrenchFET power MOSFET in the PowerPAK SC-70 package. Providing increased power density and reliability for portable electronics, the Vishay Siliconix SiA466EDJ offers a package-limited continuous drain current for a 20V MOSFET in the 2mm x 2mm footprint area, and it is the only such device with a VGS rating of ㊣20V to provide integrated ESD protection.

The SiA466EDJ's 25A package-limited continuous drain current is 13 per cent higher than the closest competing device. In load switch applications, the high current rating provides an additional safety margin for large in-rush currents and fault conditions including short circuits. The MOSFET's 2,500V integrated ESD protection prevents static damage from handling or human body contact.

Vishay's 20V n-channel

The device released today is a versatile solution for power management in portable equipment designs. The combination of a high current rating and excellent on-resistance times gate charge figure of merit (FOM) optimises synchronous buck converters and load switches in wireless and fast battery chargers, smartphones, tablets, notebook computers and e-locks.

To increase efficiency in high-frequency switching applications, the SiA466EDJ's low on-resistance of 9.5m次 (10V), 11.1m次 (6V) and 13.0m次 (4.5V) reduces conduction losses, while its low 6.3nC typical gate charge and 0.9次 gate resistance minimise switching losses. The MOSFET is 100 per cent RG-tested, RoHS-compliant and halogen-free.

Samples and production quantities of the SiA466EDJ are available now, with lead times of 13 weeks for large orders.





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