40V MOSFETs flaunt industry's lowest ON-resistance

Toshiba America Electronic Components Inc. has introduced its 40V power MOSFET U-MOS IX-H series, which according to the company is a line-up of low-voltage, ultra-efficient trench MOSFETs based on its next generation U-MOS IX-H semiconductor process.

The U-MOS IX-H process claims to realise the lowest ON-resistance in the industry, compared to Toshiba's conventional U-MOS VI-H series, noted the company. The MOSFETs also realise a low Qoss, for increased efficiency in switching-mode power supplies, including servers and telecom base stations, DC-DC converters, synchronous rectification and other power management circuitry where low-power operation, high-speed switching and minimum PCB real estate are needed. Initially available in a 40V version, the UMOS IX-H series will be extended in the coming months with devices offering ratings of 30V to 60V.

The first device in the series, a 40V version, has a typical RDS(ON) of only 0.7mΩ (max 0.85mΩ) and a typical output capacitance (Coss) of 1930pF. Rated for 40V, the TPHR8504PL is supplied in an ultra-miniature SOP-Advance package measuring 5mm x 6mm. A current rating of 150A contributes to reliability, added the company.

Toshiba's latest MOSFETs are available with budgetary pricing starting at $0.48.