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Toshiba samples 48-layer, 2bit/cell flash memory

Posted: 30 Mar 2015 ?? ?Print Version ?Bookmark and Share

Keywords:SSD? BiCS? flash memory?

Toshiba introduced its 48-layer three dimensional stacked cell structure flash memory called BiCS. The device is a 2bit/cell 128Gbit (16GB) device.

The BiCS is based on a 48-layer stacking process, which enhances reliability of the write/erase capability and boosts write speed in solid state drives (SSD).

48-layer 2bit/cell

Toshiba also announces that it is proactively promoting the migration to 3D Flash memory through a product portfolio emphasising large capacity applications such as SSD.

The company is also readying for mass production in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 is now under construction and will be completed in the first half of 2016.

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