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Alliance Memory unveils high-speed CMOS DDR SDRAMs

Posted: 07 Apr 2015 ?? ?Print Version ?Bookmark and Share

Keywords:CMOS? DDR SDRAM?

Alliance Memory is pitching new high-speed double data rate synchronous DRAMs with densities of 256Mbit, 512Mbit and 1Gbit in a 60-ball 8mm x 13mm x 1.2mm TFBGA package and a 66-pin TSOP II package.

The DDR SDRAMs are drop-in, pin-for-pin-compatible with industrial, medical, communications and telecom products, which require high memory bandwidth and PC performance. The AS4C32M8D1, AS4C64M8D1 and AS4C64M16D1 are configured as four banks of 32M word x 8bits, 64M word x 8bits, and 64M word x 16bits respectively. The lead and halogen-free devices offer a synchronous interface and operate from a 2.5V (0.2V) power supply.

The AS4C32M8D1, AS4C64M8D1 and AS4C64M16D1 feature clock rates of 200MHz and 166MHz and are offered in commercial (0C to 70C) and industrial (-40C to 85C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose suitable modes.

With the addition of the AS4C32M8D1, AS4C64M8D1 and AS4C64M16D1, Alliance Memory now offers an extensive line-up of DDR SDRAMs featuring densities of 64Mbit, 128Mbit, 256Mbit, 512Mbit and 1Gbit. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn't perform die shrinks, which frees up engineering resources.





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