Cypress debuts 4Mb ferroelectric RAMs

Cypress Semiconductor Corp. has rolled out a line of 4Mb serial Ferroelectric Random Access Memories (F-RAMs) that claims to be the industry's highest density serial F-RAMs. The devices boast a 40Mhz serial peripheral interface (SPI), a 2V to 3.6V operating voltage range and are available in industry-standard, RoHS-compliant package options.

All Cypress F-RAMs provide 100-trillion read/write cycle endurance with 10-year data retention at 85°C and 151 years at 65°C, stated the company.

Cypress F-RAMs are intended for applications requiring continuous and frequent high-speed reading and writing of data with absolute data security. The 4Mb serial F-RAM family addresses mission-critical applications such as industrial controls and automation, industrial metering, multifunction printers, test and measurement equipment and medical wearables.

The 4Mb serial F-RAMs are sampling in industry-standard 8EIAJ and 8TDFN packages, with production expected in 4Q15.