Anvo-Systems delivers 1Mbit nvSRAM

Anvo-Systems Dresden unveiled a serial non-volatile static random-access memory (nvSRAM), ANV32AA1W featuring a 1Mbit storage capacity.

The nvSRAM has a silicon-oxide-nitride-oxide-silicon (SONOS) flash storage element included with each memory cell, so in the event of an unforeseeable operating voltage drop below a defined value, the robust, cost-optimised SONOS technology enables non-volatile storage of all data in less than 15ms. The non-volatile memory device also provides the typical advantages of static random access memories (SRAMs), such as fast access times and unlimited read and write endurance.

The ANV32AA1W serial nvSRAM comes with a double memory architecture organised as 128k words of 8bits each and supports SPI Modes 0 and 3. It runs at a clock rate of 66MHz.

An integrated Power Down functionality (hibernate mode) with a standby current of less than 1?A ensures low power consumption of the system. The time to recover from Power Down mode is typically only 60?s. Unique safety features, such as checksum protected memory accesses (Secure READ and Secure WRITE) as well as Time Monitoring, ensure a high degree of reliability of the nvSRAM.

The ANV32AA1W can be operated with 2.7V to 3.6V and comes in 8-pin DFN and 16-pin 169mil TSSOP packages for commercial and industrial (-40°C to 85°C) temperature ranges.

- Julien Happich
??EE Times Europe