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20V MOSFETs slash space, power in mobile devices

Posted: 25 Jun 2015 ?? ?Print Version ?Bookmark and Share

Keywords:Vishay Intertechnology? MOSFET? wearable? medical device? smartphone?

Vishay Intertechnology Inc. has announced a TrenchFET 20V n-channel MOSFET in the chipscale MICRO FOOT 0.8mm x 0.8mm package with an ultra-thin 0.357mm profile. Geared to conserve space, decrease power consumption, and extend battery usage in smartphones, tablets, wearable devices, solid-state drives and portable medical devices such as hearing aids, the Vishay Siliconix Si8824EDB promises to deliver the industry's lowest on-resistance for any 20V device with a 1mm square or

Si8824EDB

Optimised for use as a load switch, small-signal switch and high-speed switch in power management applications, the Si8824EDB features extremely low on-resistance of 75m? at 4.5V, 82m? at 2.5V, 90m? at 1.8V, 125m? at 1.5V, and 175m? at 1.2V. These ratings are up to 25 per cent lower than the closest competing 20V MOSFET in an identical CSP package, and up to 65 per cent lower than the closest competing 20V device in the DFN 1mm x 0.6mm package. The MOSFET's 20V VDS, ESD protection, ratings down to 1.2V and low on-resistance provide a combination of safety margin, gate drive design flexibility and high performance for lithium-ion battery-powered applications.

The Si8824EDB offers an extremely low on-resistance times area of 40m?-mm2, 28 per cent lower than the closest competing 20V MOSFET in the DFN 1mm square package, to save space and reduce battery power consumption in mobile applications. The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat, stated the company. The MOSFET's 2kV integrated ESD protection prevents static damage from handling or human body contact.

Samples and production quantities of the Si8824EDB are available with lead times of 14 to 16 weeks for larger orders.





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