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EPC eGaN half bridge power ICs with integrated bootstrap FET

Posted: 16 Jul 2015 ?? ?Print Version ?Bookmark and Share

Keywords:Efficient Power Conversion? FET? power IC? EPC? eGaN?

Efficient Power Conversion (EPC) has rolled out the EPC2107 (100V) and EPC2108 (60V) eGaN half bridge power ICs featuring integrated bootstrap FET. According to the company, the devices eliminate gate driver induced reverse recovery loses as well as the need for a high side clamp. In addition, this is the first time that a bootstrap FET has been integrated in an eGaN power circuit, added the company.

Designed specifically for resonant wireless power transfer applications, these products allow rapid design of highly efficient end-user systems, setting the stage for mass adoption of wireless power transfer. In addition, these GaN power ICs come in extremely small, chip-scale packages, reducing the size of the overall system. This line of chips is lower in cost due to reduced overall component count, one GaN device versus three FETs!

EPC2107, EPC2108

Although there are several standards for wireless power transfer, the A4WP standard, Rezence, offers superior features and capabilities to end users, the consumer. For example, Rezence allows for spatial freedom when charging, eliminating the need for exact positioning of devices when charging. It also has an exceptional charging range, providing consumers with true 'drop and go' charging. Additionally, the standard allows for charging multiple devices with different power requirements simultaneously. Another key feature is that Rezence compliant wireless power systems will charge devices in the presence of metallic objects such as keys, coins and utensils, making it an ideal choice for automotive, retail and household applications, EPC noted.

By integrating two eGaN power FETs into an integrated power circuit, interconnect inductances and the interstitial space needed on the PCB are eliminated. Having this single integrated power component increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the wireless power system designer's end product.

EPC2107, EPC2108

These devices come in 1.35mm x 1.35mm chip-scale package for reduced size, improved switching speed and thermal performance leading to increased power density.

In support of the EPC2107 and EPC2108 ICs, EPC also offers complete demonstration wireless power transfer systems, as well as development boards for the evaluation of these two eGaN power ICs.

The A4WP Class 3 (EPC9113) or A4WP Class 2 (EPC9114) wireless power demonstration systems have three components: ZVS Class-D Source (or amplifier) board (Rezence Class 2: EPC9510, included in EPC9114 kit and features the 100V EPC2107; and Rezence Class 3: EPC9509, included in EPC9113 kit and features the 60V EPC2108); Class 2 or 3 Rezence compliant source (or transmit) coil; and Category 3 Rezence compliant device (or receiving) board including coil.

The EPC9113 wireless power demonstration kit is A4WP Class 3 compliant, capable of delivering up to 16W into a DC load while operating at 6.78MHz (which can be modified to operate at 13.56MHz), while the EPC9114 wireless power demonstration kit is A4WP Class 2 compliant at 10W. The purpose of the demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer. Both kits use the high frequency switching capability of EPC gallium nitride transistors to facilitate high efficiency wireless power systems.

For customers with their own coil design, the source (or amplifier) boards are also sold separately as EPC9509 (featuring the 60V EPC2108) and EPC9510 (featuring the 100V EPC2107).

EPC2107, EPC2108

All products are available for immediate delivery from Digi-Key.





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