Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > RF/Microwave

Freescale expands broadband RF power amplifier line-up

Posted: 22 Jul 2015 ?? ?Print Version ?Bookmark and Share

Keywords:Freescale Semiconductor? power amplifier? RF? industrial radio?

Freescale Semiconductor has introduced the Airfast AFIC901N LDMOS RF integrated device and the AFT05MS003N LDMOS transistor as the latest addition to its broadband RF power amplifier portfolio. The products can be operated at 3.6V or 7.5V and are geared for applications where power for radio range, and efficiency for battery life, are key design essential.

Transition from analogue to digital modulation schemes usually requires a radio redesign. The efficiency these devices allows land mobile radio OEMs to take advantage of the transistors' performance to enhance battery life, said the company. High gain provides an opportunity to reduce the number of transistors used, thus minimising system cost.

RF power amplifier

The Airfast AFIC901N LDMOS RF integrated device and AFT05MS003N LDMOS transistor have broad bandwidths that cover frequency bands between 136MHz and 941MHz. They also offer high efficiency and gain, and are housed in compact and lightweight over-moulded plastic packages. Their extreme ruggedness (> 65:1 VSWR) enables highly robust handheld radios.

The transistors are suited for use in combination with Freescale MCUs for applications such as automatic meter readers that operate at 169MHz, 434MHz or 868MHz, where they can cost-effectively increase the application's communication range. They are also suitable for other M2M applications and supervisory control and data acquisition (SCADA) systems.

The AFIC901N two-stage LDMOS device delivers 1W CW of RF output power with 63 per cent efficiency and 30dB gain at VHF frequencies between 136MHz and 174MHz. The device is housed in a QFN 4 x 4 package. As it delivers its full 30dBm rated power with an input power of 0dBm, it eliminates the need for pre-amplification. The AFIC901N offers RF matching flexibility externally to the device at the input and output, as well as at the interstage level. This lets designers optimise the device for their particular system requirements, including multiple radio bands, by changing only a few discrete components on the circuit board, noted Freescale.

The single-stage AFT05MS003N provides 3W of CW power. It covers 136MHz to 941MHz with 17dB gain and 67 per cent efficiency in the VHF band. The AFT05MS003N is housed in a SOT-89 over-moulded plastic package. The transistors join Freescale's Airfast portfolio of 7.5VDC to 12.5VDC transistors for mobile and M2M radio applications ranging from 1W to 75W.

The AFT05MS003N is in production and the AFIC901N is sampling. Samples and reference designs for VHF (135MHz to 175MHz) and UHF (350MHz to 520MHz) applications are available for both parts.

- Graham Prophet
??EE Times Europe

Article Comments - Freescale expands broadband RF power...
*? You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top