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120V, 20A eGaN IC optimised for wireless power transfer

Posted: 16 Sep 2015 ?? ?Print Version ?Bookmark and Share

Keywords:EPC? wireless power transfer? gallium nitride? MOSFET? eGaN?

Efficient Power Conversion Corp. (EPC) has announced the EPC2110 as the latest member of its portfolio of enhancement-mode gallium nitride ICs.

The EPC2110 is a dual (common-source) eGaN FET configuration in a tiny 1.35mm x 1.35mm, 120VDS, 20A device with a maximum RDS(on) of 60m with 5V applied to the gate. This GaN IC delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package, detailed the company.

EPC2110

Compared to modern silicon power MOSFET with similar on-resistance, the EPC2110 is much smaller and has many times superior switching performance. Circuit applications that benefit from this eGaN IC's performance include ultra high frequency DC-DC conversion, synchronous rectification, class-D audio amplifiers, and most notably, wireless power transfer.

The EPC2110 is priced at $1.06 in 1,000-piece quantities and is available through Digi-Key.

Datasheet: http://epc-co.com/epc/Products/eGaNFETs/EPC2110.aspx





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