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CMOS MOSFETs flaunt low flicker noise

Posted: 29 Sep 2015 ?? ?Print Version ?Bookmark and Share

Keywords:X-FAB Silicon Foundries? MOSFET? transistor? CMOS?

X-FAB Silicon Foundries has rolled out transistors that boast significantly reduced flicker noise on its mixed-signal CMOS process platforms. According to the company, flicker noise in CMOS MOSFETs has been slashed in both the n-channel device in the XH035 0.35?m process and the p-channel device in the 0.18?m process by a factor of five.

The XH035 3.3V n-channel MOSFET has a lower flicker noise comparable to that of its companion XH035 3.3V p-channel MOSFET, when referenced to its input, and maintains the standard n-channel MOSFET's threshold voltage and current drive capability. Using both types of low-noise transistors it is possible to design improved, lower-noise amplifier variants with a significantly higher signal-to-noise ratio (SNR), and to make circuits that are more compact with better performance and are more cost-effective, X-FAB stated.

Similarly, the XH018 3.3V p-channel MOSFET exhibits a much lower flicker noise level than the standard p-channel device. The low-noise XH018 3.3V p-channel device behaviour is similar to that of the low-noise XH035 3.3V p-channel MOSFET device.

The n-channel transistor and its p-channel counterpart, integrated within the XH035 process design kit (PDK), are available immediately for new designs. Noise parameters are included within the device models to facilitate an accurate simulation of the noise behaviour of a circuit prior to its actual use. For the XH018 process, the lower-noise 3.3V p-channel MOSFET will become available for new designs in November 2015.

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