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IGBT claims to boost power efficiency of air-cons

Posted: 20 Nov 2015 ?? ?Print Version ?Bookmark and Share

Keywords:Renesas Electronics? IGBT? air-conditioner? transistor?

Renesas Electronics Corp. has uncloaked a power semiconductor device for air conditioner power factor correction (PFC) circuits that use partial switching, which are widely used in mid- to low-end air conditioners. The RJP65T54DPM-E0 is an expansion of Renesas' 7th generation insulated gate bipolar transistor (IGBT) that realises power efficiency with low saturation voltage (Vce (sat)) of 1.35V and low switching noise, indicated the company.

The RJP65T54DPM-E0 uses the company's thin-wafer technology. The device is optimised for the requirements of air conditioner PFC circuits, has minimal switching noise, which reduces electromagnetic interference (EMI), and can simplify EMI filtering. The use of an isolated-type full molded package eliminates the need for an insulation sheet between the device and the heat sink. In addition, the RJP65T54DPM-E0 is rated up to Tj=175C that improves the operating temperature range, added the company.


In addition to the IGBT device, Renesas has three existing IGBT devices in production using 7th generation technology that are suitable for full switching PFC circuits. (The RJP65T43DPM-00, the RJH65T46DPQ-A0 and the RJH65T47DPQ-A0).

Samples of the RJP65T54DPM-E0 are available for $3 per unit. Mass production is scheduled to begin in March 2016 and is expected to reach a volume of 300,000 units per month by March 2017.

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