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Imec showcases next-gen devices to supersede silicon

Posted: 14 Dec 2015 ?? ?Print Version ?Bookmark and Share

Keywords:Imec? silicon? FinFET? CMOS? spintronics?

Imec also presented a planar InGaAs homo-junction TFET with 70 per cent Indium (In) content. The increase of In content from 53-70 per cent in a 8nm channel, was found to significantly boost the performance of the device. A record ON-state current (ION) of 4?A/?m (IOFF = 100pA/?m, Vdd = 0.5V and Vd = 0.3V) with a minimum subthreshold swing (SSmin) of 60mV/dec at 300k was obtained for a planar homo-junction TFET device. It was also shown that subthreshold swing and transconductance in TFET devices were more immune to positive bias temperature instability (PBTI) compared to MOSFET devices.

"Imec's R&D enables Moore's law beyond the 5nm technology node through three approaches. First, we are tackling the technology challenges to extend silicon CMOS devices towards smaller nodes. At the same time, we research into disruptive heterogeneous solutions for beyond-silicon CMOS devices to increase performance and introduce new functionalities. Lastly, Imec pursues emerging beyond-CMOS devices and systems such as spintronics to investigate further functional scaling beyond device-density-driven scaling," stated Aaron Thean, VP and director of Imec's advanced logic R&D programme. "Boosting the performance of advanced compound semiconductor logic devices is extremely important, and these results support the quest of the semiconductor industry to find solutions that enable 5nm technology nodes and beyond."

Imec's research into advanced logic scaling is performed in cooperation with Imec's key partners in its core CMOS programmes including GlobalFoundries, Intel, Micron, Panasonic, Qualcomm, Samsung, SK Hynix, Sony and TSMC.

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