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( File format: PDF, 110.0kB )
Power MOSFET 8 V, 3.3 A, Load Switch with Level-Shift P-Channel, TSOP-6
ON Semiconductor Corp

Description
The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF
Features
Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ESD Rating of 3000 V Pb-Free Package is Available




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