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( File format: PDF, 56.0kB )
Trench Power MOSFET -20 V, -3.2 A, Single P-Channel SOT-23
ON Semiconductor Corp

Description
This P-Channel device was designed using ON Semiconductor's leading trench technology for low RDS(on) performance in the SOT-23 package for surface mount PCBs. The low RDS(on) performance is particularly suited for battery power management applications.
Features
Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available




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