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Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
ON Semiconductor Corp

Description
This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
Features
Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) Higher Efficiency Extending Battery Life Logic Level Gate Drive (MOSFET) Performance DFN Package This is a Pb-Free Device




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