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2015-09-01 Mystery in memory: Why 3D XPoint is not PCM
By keeping secret the technology behind 3D XPoint memory, Micron and Intel gave the engineering community a challenge by using phrases such as "new recipe," "bulk switching," "fundamental and new."
2016-01-18 3D XPoint moves from lab to fab
Intel and Micron defined 3D XPoint as a new memory architecture that fills a gap between DRAM and flash, delivering NAND like density at significantly higher performance and lower latency.
2016-01-11 3D NAND scales memory back to Moore's Law
Prior to going 3D, Micron could only shrink each new generation in its x-y dimensions, but they hit the wall at 20nm, only able to shrink in one direction, either x or y, at the 16nm node
2015-08-24 Intel CEO finds IoT road too narrow
Brian Krzanich talked about the 3D Xpoint memory chips co-designed with Micron, the outlook for Moore's Law and EUV lithography, China and the pending $16.7 billion deal to acquire Altera.
2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2016-03-11 Phase change memory advances: Discontinuity, melting
Understand the role of melting during threshold switching and the post-threshold switching conducting state prior to SET state crystallisation.
2015-07-30 Intel, Micron unleash novel non-volatile memory
The executives said the memory is based on a fundamental discovery that has yielded a non-volatile memory that exhibits a "bulk material property change" at the cross-point of metal access lines.
2016-04-21 Intel's post-PC plan to take a short-term hit
The semiconductor giant marks the beginning of the end for the PC era, and shifts its investments in microchips that power data centers and Internet connected devices.
2016-01-25 Improvement in light source could speed up EUV progress
Prototype systems in commercial fabs now use an 85W light source, soon to be upgraded to 125W, while ASML recently demoed an 185W capability and promises it will hit 250W before the end of the year.
2016-03-31 HPE's hybrid DRAM/flash a first in new memory family
The release of the 8 Gbyte NVDIMM-N boards with new Broadwell-based Proliant DL360 1U and 380 2U servers signify HPE's move toward a new kind of persistent memory in servers.
2016-03-16 Gradual growth for fab equipment mfg eyed for 2016
Fab tool spending is expected to pick up slowly in the first half of 2016 and accelerate in 2017, as growth is expected to be buoyed by 24 new facilities, which began construction last year.
2015-10-15 Data centre, flash buoy Intel revenue in Q3
Intel revealed Q3 revenue at $14.5 billion, a 10 per cent increase from 2Q15, while net profits were $3.1 billion up 15 per cent from the last quarter but down six per cent from the same quarter last year.
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