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2014-08-07 Samsung preps future SSDs with 3bit V-NAND chips
The soon-to-be-shipped chips feature a vertical architecture stacking 32 cell layers on top of one another, with each layer fitting 3bits of data. Samsung also launched a smart storage initiative to leverage unused capabilities of flash controllers.
2008-06-09 Hynix, Samsung race to adopt 3bit/cell NAND
Hynix and Samsung are separately gearing up for a push into the 3bit/cell NAND flash race. Hynix developed a 32Gbyte NAND flash memory using 3bit/cell technology, while Samsung will start producing 3bit/cell NAND by the end of 2008.
2010-01-27 3bit-per-cell NAND ready for prime time
As the NAND industry successfully commercialized MLC technology, 3bit-per-cell technology will help the industry produce efficient non-volatile storage fueling growth of many current and new apps.
2015-08-13 Samsung brings 3D NAND to mainstream
According to a company executive, Samsung will soon start making a version of its 850 EVO SSDs using its latest 48-layer, 3bit per cell, 256Gb 3D NAND chips.
2010-08-20 Intel, Micron codevelop 3bpc NAND flash
Intel Corp. and Micron Technology Inc. have produced a 3bit-per-cell (bpc) NAND flash memory using 25nm process technology.
2011-11-23 Will SSD go the distance?
Here's an overview of the SSD technology and how vendors have been able to improve its endurance and reliability to a level that meets enterprise requirements.
2010-04-16 When will memristors be ready for prime time?
While memristors represent a potential revolution in electronic-circuit theory akin to the invention of the transistor, it will take a killer application to get it off the ground.
2009-10-09 Ultrasound T/R switch speeds design
TI's eight-channel, transmit/receive (T/R) switch addresses designers' need to build smaller portable ultrasound systems, speeds time to market.
2011-04-26 Toshiba-SanDisk overtake Intel-Micron in NAND process race
Outpacing the Intel-Micron duo, Toshiba and SanDisk have fabricated 2bit-per-cell, 64Gb NAND flash memory chips with 19nm process technology, thus enabling 8GB on a single chip.
2013-05-22 Toshiba to produce next-gen NAND flash tech
The company developed a second generation 19nm process technology that it will apply to mass production of 2bit/cell 64Gb NAND memory chips later this month.
2007-10-08 Toshiba mulls over 450mm fab, EUV litho
Aiming to maintain its edge in the IC market, Japan's Toshiba Corp. is exploring several new chip-production technologies, including 450-mm fabs and EUV lithography.
2016-05-16 The ideal union of PAM and Ethernet
Understand how various Ethernet speeds evolved through the utilisation of various pulse amplitude modulation (PAM) schemes.
2008-08-14 SSDs find place in ultramobile apps
The ultra mobile PC, notebook and related sub-notebook segments could become a big driver for SSDs, said Doreet Oren, director of product marketing for SSDs at SanDisk Corp.
2014-05-02 SSD makers extend offerings to workload applications
Micron, SanDisk, and Samsung are capitalising on soaring demand for flash in data centres, developing workload-optimised SSD platforms with varied write capabilities that target the entire enterprise spectrum. The global SSD market is thus expected to jump by 30 per cent, reaching $12.4 billion this year, according to IHS iSuppli.
2012-04-12 Selecting the appropriate SSD drive
Learn how to choose the right SSD solution for your requirements.
2005-02-01 SDR is not yet on call
The technology for SDRs has been around for years but it hasn't found yet its place in the wireless realm.
2014-05-14 SanDisk, Toshiba inch closer to 3D NAND with 15nm
The 15nm technology replaces the previous 19nm and provides a transitional step to 3D NAND. It scales chips along both axes and will be deployed across SanDisk products including enterprise SSDs.
2010-03-04 SanDisk, Toshiba aim to reclaim NAND process lead
The team of SanDisk Corp. and Toshiba Corp. is set to roll out a 24nm NAND flash part in 2H 10 to regain the lead from the Intel-Micron duo.
2013-04-15 Samsung outs 128Gbit flash under 20nm
Samsung has begun mass production of 128 Gbit NAND flash memory aimed at driving the transition from magnetic to solid-state drives.
2014-06-09 Phase change memory: Multi-level to multi-tasking
In the VLSI 2014 paper, a 4bit per cell will be presented, the equivalent of 16 levels. It is conceivable that such a memory could operate in a multi-tasking role serving two separate applications.
2014-10-27 Perform position encoding in battery-powered apps
Find out how position measurements using ULP 1-chip Hall encoders can be performed efficiently with direct battery operation or even during power failure.
2008-08-28 Operational amps reject EMI, RF interference
National Semiconductor Corp. has introduced three operational amplifiers (op amps) with integrated EMI filters that maintain the accuracy of analog systems by reducing the effects of RF interference.
2008-07-11 NAND flash pushes beyond 10MBps
NAND flash density has already reached 16Gbit per die and beyond with 2bit/cell multilevel-cell (MLC) technology but program performance has remained in the 10MBps range.
2011-02-08 Mux connects components for military DAQ
Vishay Intertechnology expands its family of MIL-PRF-38535-screened analog switches and multiplexers with the 8-channel, single-ended DG408 analog multiplexer.
2009-08-17 Micron: NAND scaling to continue
Brian Shirley, VP of Micron Technology Inc.'s memory group offers a differentand upbeatviewpoint about the future of NAND memory.
2015-03-27 Micron, Intel tout 3D NAND flash chips
Micron and Intel developed their own 3D NAND flash chips, which will sell as chips and in solid-state drives. It will pack 256Gbits into vertical NAND chips using MLC and 384Gbits in TLC versions.
2008-10-01 Memristors transit to reality
Hewlett-Packard Labs is attempting to catapult the memristor, the fourth passive circuit element after resistors, capacitors and inductors, into the electronics mainstream.
2009-07-01 Memory vendors kick off NAND scaling race
The Intel-Micron duo, Samsung and Toshiba are racing each other for bragging rights in terms of NAND scaling leadership.
2008-03-05 LED driver trims component count in designs
Exar has released a LED driver in a small 3mm x 3mm QFN package that integrates several off-chip functions, which lowers external component requirements while saving board space.
2013-01-23 Key ADC specs for system analysis
Know the key specifications for ADCs when comparing the performance of SAR and delta-sigma converter systems.
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