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2007-01-25 Sandisk to deliver 56nm gigabyte NAND flash chips
SanDisk Corp. will launch this quarter a 1Gbyte single-chip multilevel cell NAND flash memory followed by a 2Gbyte version in the second quarter.
2007-03-01 Toshiba, SanDisk ship 'highest-density' NAND
Toshiba co-developed with SanDisk a 16Gbit NAND flash memory fabricated in 56nm process technology, said to be the highest-density single-chip NAND flash memory yet achieved.
2008-12-16 DRAM adopts better features
Samsung Electronics Co. Ltd's 56nm DRAM is something to watch out for. Changes to the basic transistor design for both the cell access transistor in the memory array and the peripheral support transistors used to design the control logic are in the works.
2007-09-06 Toshiba, SanDisk open 300mm Yokkaichi fab
Toshiba and SanDisk have inaugurated the 300mm Fab 4 at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.
2007-10-26 Toshiba taps optical lithography in fabs
Despite the hype surrounding EUV, nanoimprint and other next-generation technologies, Toshiba is still using optical lithography in its current production fabs.
2008-10-30 Toshiba readies 43nm SLC NAND flash
Toshiba has developed a new line-up of 43nm single-level cell NAND flash memory products available in densities ranging from 512Mbit to 64Gbit.
2007-04-18 Toshiba pins growth plans on NAND, OLED expansion
Toshiba Corp. revealed that its mid-term strategy includes bullish plans to expand sales, expansion of NAND flash memory development and a commitment to OLED displays for TV applications.
2007-01-10 Toshiba offers four NAND flash solutions
To address the rapidly growing market for embedded flash solutions in consumer electronics and other handheld systems, TAEC is rolling out four embedded NAND solutions.
2008-02-11 Toshiba develops 16Gbit NAND at 43nm CMOS tech
Toshiba has developed a 16Gbit NAND flash memory chip fabricated with 43nm process co-developed with SanDisk.
2007-12-14 Toshiba debuts SSDs with MLC NAND flash
Toshiba and TAEC announced their entry into the emerging market for NAND-flash-based solid-state drives with a series of products featuring multi-level cell (MLC) NAND flash memory.
2007-10-18 Special Report: Counterfeit parts, legitimate woes
This is the first half of a two-part special report by Semicondutor Insights that aims to expose the prevalence of counterfeit devices coming in over the past few years, which could indicate an alarming trend.
2008-09-05 Slump in DRAM, NAND flash prices lingers
DRAM and NAND flash contract prices continued to slide in August, reported Gartner Inc. NAND flash prices across all densities fell because of weak demand, high inventory and oversupply.
2008-05-08 Report: NAND flash glut turns for the worse in Q1
Impacted by the subprime mortgage crisis in the United States and the slow season, oversupply of NAND flash worsened in Q1 08, reported DRAMeXchange.
2007-04-26 Report: DRAM prices may soon hit bottom
The second half may represent the bottom of the current extremely low DRAM pricing levels, reports DRAMeXchange.
2009-01-08 Report: DRAM capex to drop 47% this year
DRAMeXchange forecasts a decline in capital expenditure amongst global DRAM makers of 47 percent compared to the previous year.
2008-02-08 Next-gen memory race heats up as bets roll
As the next-generation memory race intensifies with more vendors jumping out of the starting blocks, the question remains if the devices will ever become mainstream parts.
2008-07-11 NAND flash pushes beyond 10MBps
NAND flash density has already reached 16Gbit per die and beyond with 2bit/cell multilevel-cell (MLC) technology but program performance has remained in the 10MBps range.
2008-05-01 MLC adds muscle to NAND
As solid-state drives change the way data is stored, several major memory chip vendors are applying their multilevel-cell technology prowess to this burgeoning market, helping to bring the NAND-based storage architecture forward, particularly for mobile electronics.
2009-07-01 Memory vendors kick off NAND scaling race
The Intel-Micron duo, Samsung and Toshiba are racing each other for bragging rights in terms of NAND scaling leadership.
2008-05-30 Mature devices shape Rolly's dancing feet
The Consumer Electronics Show in January was rocked by the "dancing" MP3 playerSony Rolly.
2009-02-25 Intel: EUV litho roadblocks ahead
A top technologist at Intel Corp. warned that a lack of mask inspection gear for extreme ultraviolet (EUV) lithography is threatening the process' future viability in the market.
2009-08-13 Intel-Micron duo heats up x3 NAND race
Intel Corp. and Micron Technology Inc. have officially announced their initial offering in the 3-bit-per-cell (x3) NAND arena.
2007-10-01 Flash makers position for NAND surge
Seeking to gain ground on Samsung Electronics, NAND flash rivals Hynix Semiconductor, IM Flash Technologies and Toshiba are quietly expanding their production and readying a new class of sub-45nm devices.
2008-12-01 Elpida touts low-power 50nm SDRAM
Elpida Memory Inc. has completed development of a 50nm DDR3 SDRAM, claiming the chip hits a new low in power consumption for DRAMs.
2009-10-16 DDR SDRAM shortage continues
South Korea memory makers warned that OEMS could be scrambling for their supply of DRAMs for some time as shortages of DDR-based SDRAMs could last until Q1 10.
2007-09-28 Confirmed: Toshiba NAND capacity sold out
Toshiba is unable to meet demand for its NAND flash memory devices and is sold out until December, according to Shozo Saito, president and CEO of the company's semiconductor unit.
2007-03-01 Boost ECC, solve NAND flash issues
Toshiba Corp. is rolling out four enabling technologies in a multipronged drive into the booming embedded NAND flash-memory market.
2009-02-13 Battle commences in 50nm DRAM arena
Samsung and Hynix, two of the industry's DRAM leaders, have already begun migrating their production of major products to the 50nm class process node. Latest analysis on both 1Gbit DDR2 SDRAM parts from Samsung and Hynix revealed very interesting trends from the two Korean rivals.
2008-12-11 Analysis: Can DDR3 turn DRAM market around?
Samsung Electronics believes that DDR3 will become the mainstream DRAM chips in 2009 but will the move to the next generation memory provide relief for an industry in the midst of a crushing downturn?
2010-01-27 3bit-per-cell NAND ready for prime time
As the NAND industry successfully commercialized MLC technology, 3bit-per-cell technology will help the industry produce efficient non-volatile storage fueling growth of many current and new apps.
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