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2001-10-09 AlGaN/GaN transistor application notes: Surface morphology
This application note describes the typical surface morphology of RF Nitro's AlGaN/GaN transistor structures grown on SiC or sapphire.
2001-10-09 AlGaN/GaN transistor application notes: Summary of physical parameters
This application note shows a tabular summary of the physical parameters of AlGaN/GaN semiconductor crystals.
2001-10-09 AlGaN/GaN transistor application notes: Substrate selection
This application note describes the available substrate materials that can be used for GaN epitaxial growth. Features and characteristics of substrate types are given importance to guide users for right material selection.
2001-10-08 AlGaN/GaN transistor application notes: Insulating GaN buffer layers
This application note explains RF Nitro's technique in insulating GaN films that is required for high-performance transistor applications.
2008-06-05 IMEC, Aixtron tout advance to low-cost GaN power apps
IMEC and Aixtron AG researchers have grown uniform AlGaN/GaN heterostructures on 200mm silicon wafers. The achievement is claimed to be a major advance towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.
2015-12-18 Imec reveals significant headway on 200mm GaN-on-Si tech
During the recent IEEE International Electron Devices Meeting 2015, Imec presented three novel AlGaN/gallium nitride (GaN) stacks featuring optimised low dispersion buffer designs.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs.
2011-05-30 IMEC develops GaN-on-silicon wafers for power devices
IMEC International has successfully produced device quality wafers with GaN/AlGaN layers on 200mm silicon wafers.
2004-12-20 Power FET 'revolutionizes switching devices'
Matsushita Electric claims its new transistor revolutionizes switching devices.
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
2002-12-20 NEC nitride power transistor delivers 2.3W output
NEC has developed a nitride semiconductor power transistor capable of 2.3W power amplification in the sub-millimeter band (30GHz).
2015-04-17 How to characterize GaN power devices
Here is a comparison of the degradation mechanisms of gallium-nitride FETs with silicon FETs. We will also discuss the need for waveform monitoring.
2011-11-11 Graphene beats ITO in UV LED current spreading
Researchers from South Korea and U.S. said graphene-based transparent contact to a GaN-based UV LED shows superior transmission in UV.
2011-03-31 GaN power transistors eliminate current collapse, cut power loss
Powdec K.K. and Sheffield University report that they have developed high voltage Gallium Nitride (GaN) power transistors that are hetero-junction structures based on novel principles.
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today.
2005-09-15 FET surpasses GaAs FETs
Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices.
2015-07-30 Diamond substrate unleashes GaN potential
Diamond substrates and heat spreaders enable GaN devices to operate near its peak power output without degradation in lifetime.
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