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2011-02-07 Single stage 5-6 GHz WLAN LNA with BFU730F
The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110 GHz fT SiGe:C BiCmos process.
2005-09-16 Silicon germanium process heralds fast RF
Commodity RF ICs may ride to unheard-of frequencies on the strength of a new SiGe BiCMOS process.
2005-04-01 Semtech chip with low propagation delay dispersions
A low power, four channel BiCMOS pin electronics IC designed to bring high-end features to low-cost logic, memory or mixed signal ATE systems was unveiled by Semtech.
2013-05-10 Scientists explore new apps for terahertz radiation
Terahertz radiation sits between the frequency bands of microwaves and infrared radiation, and it can easily penetrate many materials, targeting applications in imaging and communication.
2014-04-14 Schematic guidelines for MMPF0200 power mgmt IC
Here are the guidelines for schematic entry using the MMPF0200.
2013-09-04 Schematic guidelines for MMPF0100 app processor
Here are the guidelines for schematic entry using the MMPF0100.
2005-10-20 RFICs invoke a paradigm shift
New manufacturing techniques and packaging technologies result in higher performance RFICs.
2002-10-03 RF Micro, Jazz partner for silicon production
Jazz Semiconductor and RF Micro Devices Inc. have entered into an arrangement in which the latter will obtain a guaranteed, lower cost source of supply for wafers fabricated utilizing Jazz's manufacturing processes.
2002-08-19 RF integrates with DSP in 4G apps
This article discusses a direct-conversion RF architecture that uses CMOS technology to design a DSP suitable for 4G apps.
2006-03-07 RF design toolkit expands model selection
XMOD Technologies has announced the release of version 2.6 of the HiCUM Master toolkit, which is designed to address the needs of the SiGe BiCMOS market.
2005-10-03 Process diversity is key to effective RF design
Optimum solutions for RF applications design often require a combination of several semiconductor process technologies
2009-06-01 Preamplifier and speaker drive using TS925
The TS925 is an input/output rail-to-rail quad BiCMOS operational amplifier. This application note highlights many advantages of the device in a global audio application.
2005-07-21 Powerex' IGBT drivers float new high-voltage solution
Powerex' new HVICs, utilizing the company's BiCMOS junction isolation design, provide level-shifting and floating logic circuits at both 600V and 1,200V.
2004-03-12 Philips, IMEC renew agreement on research collaboration
Royal Philips Electronics NV has signed an agreement to provide its researchers inside and outside the semiconductor division with access to research facilities and expertise at the Interuniversities MicroElectronics Center (IMEC) through to 2008.
2005-10-17 Philips addresses gain requirements of RF, microwave apps
Philips introduced QUBiC4X, the latest addition to its QUBiC4 family of high-performance BiCMOS process technologies.
2004-03-16 Passive integration activates wireless
The PiiP concept is a unique design approach for integrating package-level design into the silicon world via BiCMOS SiGe process.
2005-01-19 Nippon Precision VCXO ICs rated at 2.25V
Nippon Precision announced its new single-chip ICs for VCXOs that feature excellent variable frequency characteristics and phase noise characteristics.
2005-12-05 New design kit for austriamicro's 0.35?m process
austriamicrosystems' Full Service Foundry business unit announced the availability of its new analog/mixed-signal high performance technology design kit (HIT-Kit) for its advanced 0.35?m technologies.
2005-09-29 National Semi boosts op amp design process
As the consumer market continues to drive advanced features into smaller form factors that require high-performance amplifiers with lower power and smaller footprints, National Semiconductor caters to such demands with the release of its new process technology for operational amplifiers
2002-10-08 Motorola optimizes chip technology for wireless apps
Motorola Inc.'s Semiconductor Products Sector (SPS) has noted that they have made enhancements on its SiGe:C technology for wireless applications.
2004-06-16 Module approach ups 5GHz WLAN front-end integration
This article describes a single-package 5GHz WLAN RF module comprising a BiCMOS IC, commercial GaAs PA and Tx/Rx switch, high-quality integrated RF filters and a patch antenna.
2001-12-01 Managing noise budget in optoelectrical designs
This technical article addresses the difficulties involved in maintaining the noise budget in the IC chipset and packaging in optoelectrical designs.
2005-11-01 Making RF cellular design simple
The challenge in RF handsets is to consume less PCB space as more features are embedded without sacrificing performance
2006-12-01 Low-cost IC drives PoE devices
Freescale Semiconductor Inc. is rolling out its first chip for end devices that draw their power from an Ethernet line.
2007-10-29 LNA provides high gain for GPS, Galileo apps
Maxim Integrated Products has introduced the MAX2659 high-gain, low-noise amplifier for GPS, Galileo and GLONASS applications, which achieves 20.5dB gain and a noise figure of 0.8dB.
2000-03-20 Key features and distinctions between CMOS and bipolar LDOs
This paper describes the history of the LDO and its future trends. It also offers an informative comparison of the key features of both bipolar and CMOS LDOs, including the hybrid-BiCMOS. Key issues such as voltage and current ranges, compensation and stability, overhead, ease of use and cost are also presented.
2002-08-08 Jazz adopts Artisan's design platform
Jazz Semiconductor has adopted Artisan Components Inc.'s design platform to support its mixed-signal, RF CMOS, and SiGe BiCMOS process technologies.
2005-06-23 Intersil's seven new data transceivers comply to RS-485, RS-422
Intersil's seven new devices are BiCMOS 3.3V powered, single data transceivers that meet both the RS-485 and RS-422 standards for differential data communications.
2004-11-22 Intersil transceivers boost performance
Intersil used the electronica forum in Munich to introduce more of its "LinearLink" family of BiCMOS transceivers.
2004-03-23 Intersil expands production relationship with IBM
Intersil Corp. has revealed plans to move all internal volume of its 0.6?m BiCMOS wafer processing to IBM's Burlington, Vermont manufacturing facility, as part of the foundry services agreement entered into between the two companies in September of last year.
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