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2007-05-22 Microsoft: DRAM errors cause PC crashes
Single-bit DRAM errors are now among the top 10 causes of PC system crashes, according to a Microsoft white paper.
2004-06-22 Renesas proofs SRAM cell against soft errors
Renesas developed an SRAM memory cell it claims can reduce soft error rates while reducing cell size and power consumption compared with previous Renesas products.
2003-09-10 Renesas halves memory chip size by merging SRAM and DRAM
Renesas Technology has developed a new SRAM memory cell combining SRAM and DRAM technologies
2002-05-02 NEC adds L2 cache, DRAM controller to Vr processor
NEC Corp. has taken the wraps off a MIPS-based 64-bit embedded processor that integrates Level 2 cache and a DRAM controller, both equipped with error-correction coding features
2009-10-30 Study: Test shortcuts cause memory failures
The electronics industry's short cuts and limiting in-house memory procedures have caused an inordinate amount of failures for DRAMs, NAND and related devices in the consumer market.
2013-05-07 Why DDR4 is not just a speed bump
The move to DDR4 incorporated changes to improve both speed and width, but there are other more significant changes.
2015-09-16 Resolving giga-scale challenges in memory design
Advanced designs are more complex and larger than ever before, and designers are balancing between accuracy and performance for large scale memory simulation and verification.
2016-03-09 Quick peek at memory testing
Let's talk about test strategies to address the potential issues in certain memory technologies such as DRAM and NAND Flash
2009-09-24 IBM touts fastest 32nm SOI dynamic memory prototype
IBM's 32nm, silicon-on-insulator on-chip dynamic memory prototype tips better speed, reliability, power use.
2008-02-11 GDDR5 gears for bandwidth-hungry graphics
The GDDR5 technology is targeted to become the next predominant graphics DRAM standard and is eyed to boost memory bandwidth of graphics applications to a new dimension
2015-03-11 ECC bumps up mobile device reliability, efficiency
Here is a look at how error correcting code enables enhanced memory density and bandwidth while maintaining power neutrality and reliability.
2013-07-08 Addressing memory scaling concerns
Here are some promising research and design directions to overcome challenges posed by memory scaling.
2004-11-19 Micron adopts Synopsys SiVL DFM for 90nm production
Micron Technology Inc. has chosen Synopsys Inc.'s SiVL silicon-versus-layout software to help implement its advanced DRAMs, flash memories, CMOS image sensors, and other semiconductor components.
2010-10-21 PCM gears up for prime time
Blending the attributes of NOR- and NAND-type flash memory, EEPROM memory, and DRAM, phase-change memory is presented as the best candidate to continue the scaling of NVM
2007-08-16 Managing embedded memory at 45nm
Embedded designers will face major challenges associated with embedded memory at or around the 45nm technology node. Industry leaders have already declared that conventional SRAM, flash and DRAM will encounter scalability and endurance issues at those feature sizes
2009-05-25 LatticeECP3 soft error detection (SED) usage guide
Soft errors occur when high-energy charged particles alter the stored charge in a memory cell in an electronic circuit. This application note describes the hardware based soft error detect (SED) approach taken by Lattice Semiconductor for LatticeECP3 FPGAs
2013-06-05 Address jitter, noise with DDR4 (Part 1)
DDR4 specification provides a way for designers to allocate the system timing and noise budget between the controller, memory interconnect and the DRAM that is difficult, if not impossible to accomplish with other high-speed interfaces
2012-03-09 Wide I/O driving 3-D with TSV
Find out how wide I/O is leading the way to through-silicon vias-based heterogeneous die stacks.
2007-12-11 The year in review: Apple's crest
Apple took the limelight in Q2 this year with the rollout of exciting consumer devicesthe Apple TV in late March and later the much-hyped iPhone in June.
2005-09-05 USB protocol analyzer runs on PCs
Saelig's new USB bus analyzer featrues a small (5.9-by-4.7-by-2.6-inch) and light (less than 2lb) package that works with a PC as an analyzer, communicating across USB 2.0's 480Mbps connection.
2013-02-04 Tackling the challenges of transition to DDR4
Know the key technical challenges designers face in transitioning to DDR4.
2014-12-19 SRAMs in nextgen IoT and wearable embedded designs
In this article, we will discuss the technology advances that necessitate SRAMs and also the evolving trends in SRAM technology that make it ready to service the needs of the future.
2016-05-04 Selecting memory for high performance FPGA platforms
Given the competitive advantage a few nanoseconds can make, the type of memory used is also a critical aspect when building a custom FPGA-based solution.
2006-05-16 Rethinking embedded flash memory choices
The new requirements of the marketplaceespecially in many consumer embedded designs and mobile devicesmean we should rethink our priorities about nonvolatile memory and look for new alternatives.
2012-02-23 PCM progress report no. 5: Scaling issues
Learn about the possible approaches to achieve the scaling necessary to make PCM a commercial success.
2004-12-22 NEC, Toshiba develop key technologies for high-density MRAM
NEC Corp. and Toshiba Corp. have announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment.
2005-05-27 Multiple-processor VME boards serve air-cooled MIL apps
The new VME boards from Mercury Computer Systems are primarily slated for high-end military apps.
2010-08-03 Microprocessor delivers high-performance connectivity
The first member of ST's new advanced symmetrical multiprocessor SPEAr family delivers computing power and customizability for multiple embedded applications.
2008-08-18 Memory rests hope on floating-body cells
Intel Corp. revisited its research on floating-body cells (FBCs) for advanced cache designs in microprocessors during the 2008 Symposium on VLSI technology in Hawaii.
2008-03-28 Low-power 32Mbit, 64Mbit SRAMs roll
Renesas Technology has introduced the R1WV6416R Series of 64Mbit Advanced Low-Power SRAM products with the highest capacity currently available.
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